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Subject: Re: [PATCH 0/6] nvmem: sunxi_sid: native format and A83T/H5 support
To:     Chen-Yu Tsai <wens@kernel.org>,
        Maxime Ripard <maxime.ripard@bootlin.com>
Cc:     linux-sunxi@googlegroups.com, Chen-Yu Tsai <wens@csie.org>,
        linux-arm-kernel@lists.infradead.org, devicetree@vger.kernel.org,
        linux-kernel@vger.kernel.org
References: <20190318073354.12151-1-wens@kernel.org>
From:   Srinivas Kandagatla <srinivas.kandagatla@linaro.org>
Message-ID: <437873bb-26c5-a451-0a4e-5d846b05244a@linaro.org>
Date:   Wed, 20 Mar 2019 14:25:37 +0000
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On 18/03/2019 07:33, Chen-Yu Tsai wrote:
> From: Chen-Yu Tsai <wens@csie.org>
> 
> Hi everyone,
> 
> This series converts the sunxi_sid driver to read out data in native
> endianness for all Allwinner SoCs. It was already the case for the H3,
> which used a different read-out method. The endianness for this hardware
> was found to be either native or little endian [1], based on the data
> layout for the thermal sensor calibration data stored within. Some SoCs
> have either 1 or 3 sensors, and calibration data for each sensor is 2
> bytes wide, with data for 2 sensors packed into 1 word.
> 
> The first three patches do some clean-up and improvements of the code
> overall. The fourth patch converts the driver to reading out data in
> native endianness. The fifth adds support for the A83T and H5. These
> two were already listed in the device tree bindings. The last patch
> adds a device node for it on H3 and H5.
> 
> Please have a look.
> 
> Regards
> ChenYu
> 
> [1] https://lkml.org/lkml/2019/2/18/134
> 
> Chen-Yu Tsai (6):
>    nvmem: sunxi_sid: Read out SID for randomness without looping
>    nvmem: sunxi_sid: Optimize register read-out method
>    nvmem: sunxi_sid: Dynamically allocate nvmem_config structure
>    nvmem: sunxi_sid: Read out data in native format
>    nvmem: sunxi_sid: Support SID on A83T and H5
>    ARM: dts: sunxi: h3/h5: Add device node for SID
> 
Applied all the nvmem patches except DTS patch to nvmem next

Thanks,
srini