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From:   Baolin Wang <baolin.wang7@gmail.com>
To:     sre@kernel.org, robh+dt@kernel.org, mark.rutland@arm.com
Cc:     linux-pm@vger.kernel.org, devicetree@vger.kernel.org,
        linux-kernel@vger.kernel.org, yuanjiang.yu@unisoc.com,
        baolin.wang@linaro.org, baolin.wang7@gmail.com,
        zhang.lyra@gmail.com, orsonzhai@gmail.com
Subject: [PATCH v3 4/5] dt-bindings: power: sc27xx: Add a new property to describe the real resistance of coulomb counter chip
Date:   Mon,  9 Dec 2019 11:56:24 +0800
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From: Baolin Wang <baolin.wang@linaro.org>

Add a new property to describe the real resistance of coulomb counter chip,
which is used to calibrate the accuracy of the coulomb counter chip.

Acked-by: Rob Herring <robh@kernel.org>
Signed-off-by: Baolin Wang <baolin.wang@linaro.org>
Signed-off-by: Baolin Wang <baolin.wang7@gmail.com>
---
 .../devicetree/bindings/power/supply/sc27xx-fg.txt |    3 +++
 1 file changed, 3 insertions(+)

diff --git a/Documentation/devicetree/bindings/power/supply/sc27xx-fg.txt b/Documentation/devicetree/bindings/power/supply/sc27xx-fg.txt
index 0a5705b..b6359b5 100644
--- a/Documentation/devicetree/bindings/power/supply/sc27xx-fg.txt
+++ b/Documentation/devicetree/bindings/power/supply/sc27xx-fg.txt
@@ -13,6 +13,8 @@ Required properties:
 - io-channel-names: Should be "bat-temp" or "charge-vol".
 - nvmem-cells: A phandle to the calibration cells provided by eFuse device.
 - nvmem-cell-names: Should be "fgu_calib".
+- sprd,calib-resistance-micro-ohms: Specify the real resistance of coulomb counter
+  chip in micro Ohms.
 - monitored-battery: Phandle of battery characteristics devicetree node.
   See Documentation/devicetree/bindings/power/supply/battery.txt
 
@@ -52,5 +54,6 @@ Example:
 			nvmem-cells = <&fgu_calib>;
 			nvmem-cell-names = "fgu_calib";
 			monitored-battery = <&bat>;
+			sprd,calib-resistance-micro-ohms = <21500>;
 		};
 	};
-- 
1.7.9.5