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Subject: Re: [PATCH v9 5/5] nvmem: eeprom: add documentation of sysfs fram and
 sernum file
To:     Greg Kroah-Hartman <gregkh@linuxfoundation.org>
Cc:     devicetree@vger.kernel.org, linux-kernel@vger.kernel.org,
        Rob Herring <robh+dt@kernel.org>,
        Christian Eggers <ceggers@arri.de>,
        Arnd Bergmann <arnd@arndb.de>
References: <20210611052652.7894-1-jiri.prchal@aksignal.cz>
 <20210611052652.7894-6-jiri.prchal@aksignal.cz> <YMMkgfRBKpwCo3PE@kroah.com>
From:   =?UTF-8?B?SmnFmcOtIFByY2hhbA==?= <jiri.prchal@aksignal.cz>
Message-ID: <8ff601c4-776b-3973-2855-eb2013e72200@aksignal.cz>
Date:   Fri, 11 Jun 2021 11:01:57 +0200
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On 11. 06. 21 10:53, Greg Kroah-Hartman wrote:
> On Fri, Jun 11, 2021 at 07:26:52AM +0200, Jiri Prchal wrote:
>> +Description:
>> +	Contains the FRAM binary data. Same as EEPROM, just another file
>> +	name to indicate that it employs ferroelectric process.
>> +	It performs write operations at bus speed - no write delays, capable
>> +	of 10^14 read/write cycles and 151 years data retention.
> 
> Are you sure of these statistics?  Don't promise something here that
> might not be true, this is not a marketing document :)

Just copied from datasheet. Is write at bus speed OK? And about others: 
much more then EEPROM would be OK? Or don't write about it?